? semiconductor components industries, llc, 1999 march, 2000 rev. 3 1 publication order number: mcr8/d preferred device
reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever halfwave, silicon gatecontrolled devices are needed. ? blocking voltage of 600 thru 800 volts ? onstate current rating of 8 amperes rms at 80 c ? high surge current capability e 80 amperes ? rugged, economical to220ab package ? glass passivated junctions for reliability and uniformity ? minimum and maximum values of igt, vgt and ih specified for ease of design ? high immunity to dv/dt e 100 v/ m sec minimum at 125 c ? device marking: logo, device type, e.g., mcr8n, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 125 c, sine wave, 50 to 60 hz, gate open) mcr8m mcr8n v drm, v rrm 600 800 volts on-state rms current (180 conduction angles; t c = 80 c) i t(rms) 8.0 amps peak non-repetitive surge current (one full cycle, 60 hz, t c = 125 c) i tsm 80 amps circuit fusing consideration (t = 8.33 ms) i 2 t 26.5 a 2 sec forward peak gate power (pulse width 1.0 m s, t c = 80 c) p gm 5.0 watts forward average gate power (t = 8.3 ms, t c = 80 c) p g(av) 0.5 watt forward peak gate current (pulse width 1.0 m s, t c = 80 c) i gm 2.0 amps operating junction temperature range t j 40 to 125 c storage temperature range t stg 40 to 150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 8 amperes rms 600 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mcr8m to220ab 50 units/rail http://onsemi.com k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode mcr8n to220ab 50 units/rail
mcr8m, mcr8n http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case e junction to ambient r q jc r q ja 2.2 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v d = rated v drm and v rrm ; gate open) t j = 25 c t j = 125 c i drm , i rrm e e e e 0.01 2.0 ma on characteristics peak forward onstate voltage* (i tm = 16 a) v tm e e 1.8 volts gate trigger current (continuous dc) (v d = 12 v; r l = 100 w ) i gt 2.0 7.0 15 ma holding current (v d = 12 v, gate open, initiating current = 200 ma) i h 4.0 17 30 ma latch current (v d = 12 v, i g = 15 ma) i l 6.0 20 40 ma gate trigger voltage (continuous dc) (v d = 12 v; 100 w )t j = 25 c v gt 0.5 0.65 1.0 volts gate nontrigger voltage (v d = 12 v; r l = 100 w )t j = 125 c v gd 0.2 e e volts dynamic characteristics critical rate of rise of offstate voltage (v d = rated v drm , exponential waveform, gate open, t j = 125 c) dv/dt 100 250 e v/ m s critical rate of rise of onstate current ipk = 50 a, pw = 40 m sec, dig/dt = 1 a/ m sec, igt = 50 ma di/dt e e 50 a/ m s *indicates pulse test: pulse width 2.0 ms, duty cycle 2%.
mcr8m, mcr8n http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) 30 60 dc 90 90 180 figure 1. typical rms current derating figure 2. onstate power dissipation figure 3. typical onstate characteristics figure 4. typical gate trigger current versus junction temperature 8 0 i t(rms) , rms onstate current (amps) 125 120 i t(av) , average onstate current (amps) 38 0 8 4 2 0 3.0 0.5 v t , instantaneous onstate voltage (volts) 100 10 1 0.1 t j , junction temperature ( c) 10 40 20 2 0 2.5 t c , case temperature ( c) p i gate trigger current (ma) 115 105 123 12 6 10 20 1.0 2.0 20 50 80 125 , average power dissipation (watts) (av) , instantaneous onstate current (amps) t dc 180 60 maximum @ t j = 25 c maximum @ t j = 125 c 5 1.5 45 110 4 100 90 95 67 12 14 67 30 16 18 5356595 25 110 4 6 8 10 12 14 16 18
mcr8m, mcr8n http://onsemi.com 4 figure 5. typical holding current versus junction temperature figure 6. typical gate trigger voltage versus junction temperature 25 20 40 t j , junction temperature ( c) 10 t j , junction temperature ( c) 25 65 40 0.2 20 5 , holding current (ma) i h 50 110 65 5 125 35 50 v gt , gate trigger voltage (volts) 80 1 1.0 10 35 95 100 10 95 80 125 0.3 0.4 0.5 0.6 0.7 0.8 0.9 110 figure 7. typical latching current versus junction temperature 65 125 40 t j , junction temperature ( c) i l , latching current (ma) 10 1 25 5 20 50 95 100 10 35 80 110
mcr8m, mcr8n http://onsemi.com 5 package dimensions to220ab case 221a09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j style 3: pin 1. cathode 2. anode 3. gate 4. anode
mcr8m, mcr8n http://onsemi.com 6 notes
mcr8m, mcr8n http://onsemi.com 7 notes
mcr8m, mcr8n http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mcr8/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
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